Theoretical and experimental studies on the binding-energy of the shallow Zn acceptor in GaxIn1−xAs/InP quantum wells
نویسندگان
چکیده
In this work we study the behaviour of the shallow Zn acceptor in GaxIn1−xAs Quantum Wells (1.5 nm < Lz < 5 nm) lattice matched to InP. The experimental results as obtained by photoluminescence and optically detected impact ionisation to determine the binding energy of Zn are compared with a theoretical calculation. The binding energy increases from the 3D bulk value for smaller Lz, passes through a maximum for the 3 nm well width, but then has an unexpected minimum at Lz = 1.5 nm.
منابع مشابه
Effective Mass and Valence-band Structure in GaxIn1−xAs/InP and GaxIn1−xP/AlGaInP Quantum Wells
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